? 2014 ixys corporation, all rights reserved IXXH60N65B4H1 v ces = 650v i c110 = 60a v ce(sat) ??? ??? ??? ??? ??? ? ? ? ? ? 2.2v t fi(typ) = 72ns ds100494c(12/14) g = gate c = collector e = emitter tab = collector to-247 g c e tab extreme light punch through igbt for 5-30 khz switching features ? optimized for 5-30khz switching ? square rbsoa ? anti-parallel sonic diode ? short circuit capability ? international standard package advantages ? high power density ? extremely rugged ? low gate drive requirement applications ? power inverters ? ups ? motor drives ? smps ? pfc circuits ? battery chargers ? welding machines ? lamp ballasts symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv ces i c = 250 ? a, v ge = 0v 650 v v ge(th) i c = 250 ? a, v ce = v ge 4.0 6.5 v i ces v ce = v ces , v ge = 0v 25 ? a t j = 150 ? c 3 ma i ges v ce = 0v, v ge = ? 20v ?????????????? 100 na v ce(sat) i c = 60a, v ge = 15v, note 1 1.7 2.2 v t j = 150 ? c 2.2 v symbol test conditions maximum ratings v ces t j = 25c to 175c 650 v v cgr t j = 25c to 175c, r ge = 1m ? 650 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c (chip capability) 116 a i c110 t c = 110c 60 a i f110 t c = 110c 40 a i cm t c = 25c, 1ms 230 a ssoa v ge = 15v, t vj = 150c, r g = 5 ? i cm = 120 a (rbsoa) clamped inductive load @v ce ? v ces t sc v ge = 15v, v ce = 360v, t j = 150c 10 s (scsoa) r g = 82 ? , non repetitive p c t c = 25c 455 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque 1.13/10 nm/lb.in weight 6g xpt tm 650v igbt genx4 tm w/ sonic diode preliminary technical information
ixys reserves the right to change limits, test conditions, and dimensions. IXXH60N65B4H1 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 notes: 1. pulse test, t ? 300 s, duty cycle, d ? 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . e ?? p to-247 (ixxh) outline 1 2 3 terminals: 1 - gate 2 - collector 3 - emitted dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 60a, v ce = 10v, note 1 13 22 s c ie s 1890 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 223 pf c res 70 pf q g(on) 95 nc q ge i c = 60a, v ge = 15v, v ce = 0.5 ? v ces 17 nc q gc 39 nc t d(on) 37 ns t ri 80 ns e on 3.13 mj t d(off) 145 ns t fi 72 ns e of f 1.15 1.75 mj t d(on) 32 ns t ri 73 ns e on 3.42 mj t d(off) 126 ns t fi 94 ns e off 1.34 mj r thjc 0.33 c/w r thcs 0.21 c/w inductive load, t j = 25c i c = 60a, v ge = 15v v ce = 400v, r g = 5 ? note 2 inductive load, t j = 150c i c = 60a, v ge = 15v v ce = 400v, r g = 5 ? note 2 reverse sonic diode (frd) symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. v f i f = 30a, v ge = 0v, note 1 2.5 v t j = 150c 2.15 v i rm t j = 150c 25 a t rr t j = 150c 78 ns r thjc 0.60 c/w i f = 30a, v ge = 0v, -di f /dt = 900a/ s, v r = 300v prelimanary technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2014 ixys corporation, all rights reserved IXXH60N65B4H1 fig. 1. output characteristics @ t j = 25oc 0 20 40 60 80 100 120 0 0.5 1 1.5 2 2.5 3 3.5 v ce - volts i c - amperes v ge = 15v 14v 13v 12v 10v 9v 11v 8v 7v fig. 2. extended output characteristics @ t j = 25oc 0 40 80 120 160 200 240 0 5 10 15 20 25 30 v ce - volts i c - amperes v ge = 15v 10v 11v 13v 12v 8v 9v 14v 7v fig. 3. output characteristics @ t j = 150oc 0 20 40 60 80 100 120 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v ce - volts i c - amperes v ge = 15v 14v 10v 11v 9v 8v 12v 7v 13v fig. 4. dependence of v ce(sat) on junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 60a i c = 30a i c = 120a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 7 8 9 101112131415 v ge - volts v ce - volts i c = 120a t j = 25oc 60a 30a fig. 6. input admittance 0 10 20 30 40 50 60 70 80 90 100 456789101112 v ge - volts i c - amperes t j = - 40oc 25oc t j = 150oc
ixys reserves the right to change limits, test conditions, and dimensions. IXXH60N65B4H1 fig. 7. transconductance 0 5 10 15 20 25 30 020406080100 i c - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 10. reverse-bias safe operating area 0 20 40 60 80 100 120 140 100 200 300 400 500 600 700 v ce - volts i c - amperes t j = 150oc r g = 5 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 102030405060708090100 q g - nanocoulombs v ge - volts v ce = 325v i c = 60a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarad s f = 1 mh z c ies c oes c res fig. 11. maximum transient thermal impedance (igbt) 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
? 2014 ixys corporation, all rights reserved IXXH60N65B4H1 fig. 12. inductive switching energy loss vs. gate resistance 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5 10152025303540455055 r g - ohms e off - millijoules 1 2 3 4 5 6 7 8 9 e on - millijoules e off e on - - - - t j = 150oc , v ge = 15v v ce = 400v i c = 30a i c = 60a fig. 15. inductive turn-off switching times vs. gate resistance 60 70 80 90 100 110 120 5 10152025303540455055 r g - ohms t f i - nanoseconds 50 150 250 350 450 550 650 t d(off) - nanoseconds t f i t d(off) - - - - t j = 150oc, v ge = 15v v ce = 400v i c = 60a i c = 30a fig. 13. inductive switching energy loss vs. collector current 0.0 0.5 1.0 1.5 2.0 2.5 30 40 50 60 70 80 90 i c - amperes e off - millijoules 0 2 4 6 8 10 e on - millijoules e off e on - - - - r g = 5 ? , v ge = 15v v ce = 400v t j = 150oc t j = 25oc fig. 14. inductive switching energy loss vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 25 50 75 100 125 150 t j - degrees centigrade e off - millijoules 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 e on - millijoules e off e on - - - - r g = 5 ? , v ge = 15v v ce = 400v i c = 30a i c = 60a fig. 16. inductive turn-off switching times vs. collector current 20 40 60 80 100 120 140 30 40 50 60 70 80 90 i c - amperes t f i - nanoseconds 90 110 130 150 170 190 210 t d(off) - nanoseconds t f i t d(off) - - - - r g = 5 ? , v ge = 15v v ce = 400v t j = 25oc t j = 150oc fig. 17. inductive turn-off switching times vs. junction temperature 30 50 70 90 110 130 150 25 50 75 100 125 150 t j - degrees centigrade t f i - nanoseconds 100 120 140 160 180 200 220 t d(off) - nanoseconds t f i t d(off) - - - - r g = 5 ? , v ge = 15v v ce = 400v i c = 30a i c = 60a
ixys reserves the right to change limits, test conditions, and dimensions. IXXH60N65B4H1 fig. 19. inductive turn-on switching times vs. collector current 0 20 40 60 80 100 120 140 160 30 40 50 60 70 80 90 i c - amperes t r i - nanoseconds 20 25 30 35 40 45 50 55 60 t d(on) - nanoseconds t r i t d(on) - - - - r g = 5 ? , v ge = 15v v ce = 400v t j = 25oc t j = 150oc fig. 20. inductive turn-on switching times vs. junction temperature 0 15 30 45 60 75 90 105 120 25 50 75 100 125 150 t j - degrees centigrade t r i - nanosecond s 26 28 30 32 34 36 38 40 42 t d(on) - nanoseconds t r i t d(on) - - - - r g = 5 ? , v ge = 15v v ce = 400v i c = 60a i c = 30a fig. 18. inductive turn-on switching times vs. gate resistance 0 40 80 120 160 200 5 10152025303540455055 r g - ohms t r i - nanosecond s 20 40 60 80 100 120 t d(on) - nanoseconds t r i t d(on) - - - - t j = 150oc, v ge = 15v v ce = 400v i c = 30a i c = 60a
? 2014 ixys corporation, all rights reserved IXXH60N65B4H1 fig. 25. recovery energy e rec vs. -di f /d t 100 150 200 250 300 350 400 450 500 400 600 800 1000 1200 1400 1600 1800 2000 -di f / d t - a/s e rec - microjoules i f =50a 30a 10a t vj = 150oc v r = 300v fig. 26. dynamic parameters q rr , i rm vs. virtual junction temperature t vj 0.20 0.40 0.60 0.80 1.00 1.20 0 20 40 60 80 100 120 140 160 t vj - degrees centigrade k f k f i rm k f q rr v r = 300v i f = 50a -di f /dt = 900a/s fig. 22. reverse recovery charge q rr vs. -di f /dt 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 400 600 800 1000 1200 1400 1600 1800 2000 -di f /d t - a/s q rr - microcoulombs 10a i f = 50a 30a t vj = 150oc v r = 300v fig. 23. peak reverse current i rm vs. -di f /d t 10 20 30 40 50 60 70 400 600 800 1000 1200 1400 1600 1800 2000 -di f /d t - a/s i rr - amperes i f = 50a t vj = 150oc v r = 300v 30a 10a fig. 24. recover time t rr vs. -di f /d t 20 40 60 80 100 120 140 400 600 800 1000 1200 1400 1600 1800 2000 -di f /dt - a/s t rr - nanasecond s i f = 50a t vj = 150oc v r = 300v 30a 10a fig. 21. forward current vs. forward voltage 0 20 40 60 80 100 0 0.5 1 1.5 2 2.5 3 3.5 4 v f - volts i f - amperes 150oc t vj = 25oc
ixys reserves the right to change limits, test conditions, and dimensions. IXXH60N65B4H1 ixys ref: ixx_60n65b4h1(e6) 9-14-12 / dmhp19-067f_4-03-14 fig. 27. maximum transient thermal impedance (diode) 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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